An efficient scan diagnosis methodology according to scan failure mode for yield enhancement

Jung-Tae Kim; Nam-Sik Seo; Ghil-Geun Oh; Dae-Gue Kim; Kyu-Taek Lee; Chi-Young Choi; InSoo Kim; Hyoung Bok Min

doi:10.1117/12.812091

30 December 2008 An efficient scan diagnosis methodology according to scan failure mode for yield enhancement

Jung-Tae Kim, Nam-Sik Seo, Ghil-Geun Oh, Dae-Gue Kim, Kyu-Taek Lee, Chi-Young Choi, InSoo Kim, Hyoung Bok Min

Proceedings Volume 7268, Smart Structures, Devices, and Systems IV; 72681H (2008) https://doi.org/10.1117/12.812091
Event: SPIE Smart Materials, Nano- and Micro-Smart Systems, 2008, Melbourne, Australia

Abstract

Yield has always been a driving consideration during fabrication of modern semiconductor industry. Statistically, the largest portion of wafer yield loss is defective scan failure. This paper presents efficient failure analysis methods for initial yield ramp up and ongoing product with scan diagnosis. Result of our analysis shows that more than 60% of the scan failure dies fall into the category of shift mode in the very deep submicron (VDSM) devices. However, localization of scan shift mode failure is very difficult in comparison to capture mode failure because it is caused by the malfunction of scan chain. Addressing the biggest challenge, we propose the most suitable analysis method according to scan failure mode (capture / shift) for yield enhancement. In the event of capture failure mode, this paper describes the method that integrates scan diagnosis flow and backside probing technology to obtain more accurate candidates. We also describe several unique techniques, such as bulk back-grinding solution, efficient backside probing and signal analysis method. Lastly, we introduce blocked chain analysis algorithm for efficient analysis of shift failure mode. In this paper, we contribute to enhancement of the yield as a result of the combination of two methods. We confirm the failure candidates with physical failure analysis (PFA) method. The direct feedback of the defective visualization is useful to mass-produce devices in a shorter time. The experimental data on mass products show that our method produces average reduction by 13.7% in defective SCAN & SRAM-BIST failure rates and by 18.2% in wafer yield rates.

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Jung-Tae Kim, Nam-Sik Seo, Ghil-Geun Oh, Dae-Gue Kim, Kyu-Taek Lee, Chi-Young Choi, InSoo Kim, and Hyoung Bok Min "An efficient scan diagnosis methodology according to scan failure mode for yield enhancement", Proc. SPIE 7268, Smart Structures, Devices, and Systems IV, 72681H (30 December 2008); https://doi.org/10.1117/12.812091

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KEYWORDS

Failure analysis

Statistical analysis

Signal analysis

Semiconducting wafers

Signal detection

Silicon

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