The optimization of bipolar magnetotransistor structures

Mihaela Hnatiuc; George Căruntu

doi:10.1117/12.823706

7 January 2009 The optimization of bipolar magnetotransistor structures

Mihaela Hnatiuc, George Căruntu

Proceedings Volume 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV; 72972M (2009) https://doi.org/10.1117/12.823706
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 2008, Constanta, Romania

Abstract

In this paper work is analysed the structure of double collector vertical magnetotransistor realised in the bipolar integrated circuits technology. Based on the model of dual Hall devices, are established the main characteristics of device operating as magnetic sensors. By using the numerical simulation it is emphasized the way in which the adequate choise of its geometry and material features, allow the obtaining of high performance devices.

Citation Download Citation

Mihaela Hnatiuc and George Căruntu "The optimization of bipolar magnetotransistor structures", Proc. SPIE 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 72972M (7 January 2009); https://doi.org/10.1117/12.823706

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