Paper
28 April 2009 Nitride image intensifiers
Author Affiliations +
Abstract
Nitride based photocathodes for image intensifiers are of interest because of the wide span of wavelengths covered by the bandgap of the AlGaInN alloy system. The potential bandgap range for this alloy system is from 6.2 eV for AlN to 0.7 eV for InN. Coupled with microchannel plate technology, this alloy system potentially offers low noise and high gain image intensifiers over a wide wavelength range. Results from L-3 EOS work in this area are presented beginning with a brief summary of unpublished early work carried out from 1992 - 1997 on AlGaN image intensifiers. The early work wrestled with the dual issues of sealing image intensifiers along with improving the quality of the AlGaN epitaxy layer. This is followed by our current results on a GaN image intensifier sealed with a photocathode from SVTA. Imagery using 375nm LED illumination is shown. The quantum efficiency at 300nm was estimated to be 16% measured in transmission mode. This QE was achieved with a 0.15μm thick Mg doped GaN active layer.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. W. Glesener, A. M. Dabiran, and J. P. Estrera "Nitride image intensifiers", Proc. SPIE 7339, Enabling Photonics Technologies for Defense, Security, and Aerospace Applications V, 73390S (28 April 2009); https://doi.org/10.1117/12.828755
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Cited by 6 scholarly publications.
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KEYWORDS
Image intensifiers

Gallium nitride

Quantum efficiency

Image processing

Microchannel plates

Reflection

Sapphire

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