Fabrication and photoelectrical properties of AZO/SiO2/p-Si heterojunction

Bo He; ZhongQuan Ma; YanLi Shi; Jing Xu; Lei Zhao; Feng Li; Cheng Shen; NanSheng Zhang; Ling Shen; XiaJie Meng; ChengYue Zhou; CunXing Miao

doi:10.1117/12.834555

24 August 2009 Fabrication and photoelectrical properties of AZO/SiO₂/p-Si heterojunction

Bo He, ZhongQuan Ma, YanLi Shi, Jing Xu, Lei Zhao, Feng Li, Cheng Shen, NanSheng Zhang, Ling Shen, XiaJie Meng, ChengYue Zhou, CunXing Miao

Author Affiliations +

Proceedings Volume 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors; 73812W (2009) https://doi.org/10.1117/12.834555
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China

Abstract

ZnO thin films doped with aluminum (AZO) were deposited on silicon dioxide covered p-Si (100) substrates by radio frequency magnetron sputtering, to fabricate AZO/SiO₂/p-Si heterojunction, as an absorber for ultraviolet cell. The optical and electrical properties of the Al doped - ZnO films were characterized by UV-VIS spectrophotometer, current-voltage measurement, and four point probe technique, respectively. The results show that AZO films have good quality. The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows typical rectifying behavior.

Citation Download Citation

Bo He, ZhongQuan Ma, YanLi Shi, Jing Xu, Lei Zhao, Feng Li, Cheng Shen, NanSheng Zhang, Ling Shen, XiaJie Meng, ChengYue Zhou, and CunXing Miao "Fabrication and photoelectrical properties of AZO/SiO₂/p-Si heterojunction", Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73812W (24 August 2009); https://doi.org/10.1117/12.834555

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