High speed CMOS active pixel sensors for particle imaging

Yan Li; Yavuz Degerli; Zhen Ji; Jiang Lai

doi:10.1117/12.836557

6 August 2009 High speed CMOS active pixel sensors for particle imaging

Yan Li, Yavuz Degerli, Zhen Ji, Jiang Lai

Proceedings Volume 7384, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Imaging Detectors and Applications; 73842P (2009) https://doi.org/10.1117/12.836557
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China

Abstract

CMOS active sensors technology has been proved to be one of the potential candidates for charged particle imaging in future high-energy experiments. Two prototypes of CMOS active pixel sensors aimed at high speed pixel detector with on-chip data sparcification are presented in this work. While having the same architecture, the two chips were developed with different CMOS processes in order to evaluate the influence of epitaxial layer thickness on charge detection performance. Thanks to the offset auto-compensation on both pixel and column level, the noise is well controlled for both two chips. Binary outputs are realized by column level auto-zeroed discriminators. Using a ⁵⁵Fe radioactive source, the charge detection capability is obtained and the factors which influence charged particles detection efficiency is discussed.

Citation Download Citation

Yan Li, Yavuz Degerli, Zhen Ji, and Jiang Lai "High speed CMOS active pixel sensors for particle imaging", Proc. SPIE 7384, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Imaging Detectors and Applications, 73842P (6 August 2009); https://doi.org/10.1117/12.836557

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