Paper
20 August 2009 Light weight low cost InGaP/GaAs dual-junction solar cells on 4" epitaxial liftoff (ELO) wafers
Rao Tatavarti, G. Hillier, C. Youtsey, D. McCallum, G. Martin, A. Wibowo, R. Navaratnarajah, F. Tuminello, D. Hertkorn, M. Disabb, N. Pan
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Abstract
High-efficiency, low-cost InGaP/GaAs dual-junction epitaxial liftoff (ELO) solar cells have been fabricated on full 4" GaAs substrates. These dual-junction solar cells exhibited an efficiency of 28.69% at AM1.5D, one-sun illumination. This is the highest reported efficiency for dual-junction ELO solar cells to date. After application of antireflection coating, the dual-junction ELO cells also exhibited fill factor >85%, open circuit voltage = 2.37 V, and short circuit current density = 13 mA/cm2. An external quantum efficiency >85% was measured for both the GaAs and InGaP sub-cells. An ELO dual-junction solar cell wafer typically weighs less than 1.7 g and has a total semiconductor thickness <5 μm. Reclaim and reuse of the GaAs substrate after the ELO process has been successfully demonstrated.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rao Tatavarti, G. Hillier, C. Youtsey, D. McCallum, G. Martin, A. Wibowo, R. Navaratnarajah, F. Tuminello, D. Hertkorn, M. Disabb, and N. Pan "Light weight low cost InGaP/GaAs dual-junction solar cells on 4" epitaxial liftoff (ELO) wafers", Proc. SPIE 7407, High and Low Concentrator Systems for Solar Electric Applications IV, 74070B (20 August 2009); https://doi.org/10.1117/12.827449
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Cited by 7 scholarly publications and 2 patents.
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KEYWORDS
Epitaxial lateral overgrowth

Solar cells

Semiconducting wafers

Gallium arsenide

Electroluminescence

Indium gallium phosphide

Quantum efficiency

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