Growth and characterisation of InAsN/GaAs dilute nitride semiconductor alloys for the mid-infrared spectral range

M. de la Mare; Q. Zhuang; A. Patanè; S. Dhar; A. Krier

doi:10.1117/12.829354

23 September 2009 Growth and characterisation of InAsN/GaAs dilute nitride semiconductor alloys for the mid-infrared spectral range

M. de la Mare, Q. Zhuang, A. Patanè, S. Dhar, A. Krier

Author Affiliations +

Proceedings Volume 7474, Sensors, Systems, and Next-Generation Satellites XIII; 747422 (2009) https://doi.org/10.1117/12.829354
Event: SPIE Remote Sensing, 2009, Berlin, Germany

Abstract

We report the successful growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content in the range 0 to 1% and photoluminescence emission in the mid-infrared spectral range. The photoluminescence emission of the sample containing 1% N reveals evidence of recombination from extended and localized states within the degenerate conduction band of InAsN. A comparison of GaAs and InAs based material shows little change in FWHM suggesting the change in substrate does not cause significant reduction in quality of the epilayers. Material grown is consistent with predictions from the band anti-crossing model (BAC model).

Citation Download Citation

M. de la Mare, Q. Zhuang, A. Patanè, S. Dhar, and A. Krier "Growth and characterisation of InAsN/GaAs dilute nitride semiconductor alloys for the mid-infrared spectral range", Proc. SPIE 7474, Sensors, Systems, and Next-Generation Satellites XIII, 747422 (23 September 2009); https://doi.org/10.1117/12.829354

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