Paper
23 September 2009 Growth and characterisation of InAsN/GaAs dilute nitride semiconductor alloys for the mid-infrared spectral range
M. de la Mare, Q. Zhuang, A. Patanè, S. Dhar, A. Krier
Author Affiliations +
Abstract
We report the successful growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content in the range 0 to 1% and photoluminescence emission in the mid-infrared spectral range. The photoluminescence emission of the sample containing 1% N reveals evidence of recombination from extended and localized states within the degenerate conduction band of InAsN. A comparison of GaAs and InAs based material shows little change in FWHM suggesting the change in substrate does not cause significant reduction in quality of the epilayers. Material grown is consistent with predictions from the band anti-crossing model (BAC model).
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. de la Mare, Q. Zhuang, A. Patanè, S. Dhar, and A. Krier "Growth and characterisation of InAsN/GaAs dilute nitride semiconductor alloys for the mid-infrared spectral range", Proc. SPIE 7474, Sensors, Systems, and Next-Generation Satellites XIII, 747422 (23 September 2009); https://doi.org/10.1117/12.829354
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Gallium arsenide

Indium arsenide

Nitrogen

Mid-IR

Luminescence

Plasma

Semiconductors

RELATED CONTENT


Back to Top