Contribution of generation-recombination processes at inner interface of MBE-grown Hg1-xCdxTe heterostucture to dark current of small active area photodiode

Galina V. Chekanova; Albina A. Drugova; Viacheslav Kholodnov; Mikhail S. Nikitin

doi:10.1117/12.829960

23 September 2009 Contribution of generation-recombination processes at inner interface of MBE-grown Hg_1-xCd_xTe heterostucture to dark current of small active area photodiode

Galina V. Chekanova, Albina A. Drugova, Viacheslav Kholodnov, Mikhail S. Nikitin

Author Affiliations +

Proceedings Volume 7481, Electro-Optical and Infrared Systems: Technology and Applications VI; 74810Y (2009) https://doi.org/10.1117/12.829960
Event: SPIE Security + Defence, 2009, Berlin, Germany

Abstract

Multilayer heterostructures of Hg_1-xCd_xTe alloy grown by Molecular Beam Epitaxy (MBE) on large size alternative substrates Si, GaAs and Ge are considered as one of productive alternative materials for issue of large format photovoltaic (PV) infrared (IR) focal plane arrays. However reaching of ultimate performance of small-pitched photodiode's (PD) covering spectral range from 8 to 12 μm depends on electronic properties of both individual layers and heterostructure interfaces. Due to small thickness of heterostructure layers, interfaces are located close to active regions of p-n junction and hence generation-recombination processes at interfaces will contribute to value of current flowing through junction. As usual measured dark current value of small-sized PD is higher than estimated from calculation and cannot be explained by discrepancy between real and estimated charge carriers concentration in absorption layers where p-n junction is formed. Objective of the present work was to calculate the contribution of recombination of charge carriers via electronic states on nearby inner interface to dark current of Hg_1-xCd_xTe LWIR PD (λco equals to 9.5-10.3 μm at T_op=77 K) and its variation with absorption layer parameters and compare it to measured data on small-pitched arrays. We have concluded previously that at high recombination rate dark current can grow in orders of value.

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Galina V. Chekanova, Albina A. Drugova, Viacheslav Kholodnov, and Mikhail S. Nikitin "Contribution of generation-recombination processes at inner interface of MBE-grown Hg_1-xCd_xTe heterostucture to dark current of small active area photodiode", Proc. SPIE 7481, Electro-Optical and Infrared Systems: Technology and Applications VI, 74810Y (23 September 2009); https://doi.org/10.1117/12.829960

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KEYWORDS

Photodiodes

Interfaces

Photovoltaics

Infrared radiation

Staring arrays

Heterojunctions

Diffusion

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