Paper
23 September 2009 Impact of mask roughness on wafer line-edge roughness
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Abstract
The influence of line-edge roughness (LER) of an optical photomask on the resulting printed wafer LER is investigated. The LER Transfer function (LTF) proposed by Naulleau and Gallatin, and later corrected by Tanabe, is shown to be a very useful tool for evaluating the low-pass filtering behavior of the imaging tool and its impact on the transfer of mask LER to the wafer. Highfrequency mask LER can also impact wafer LER by lowering the normalized image log-slope (NILS) of the image, though it would take a large amount of mask LER before this affect would be noticeable. Low-frequency mask LER, most likely due to mask writer errors such as shot placement or rotation errors, will produce wafer LER that may be significant in magnitude. Further work characterizing the magnitude and frequency content of mask LER over many different masks and processes is needed.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chris A. Mack "Impact of mask roughness on wafer line-edge roughness", Proc. SPIE 7488, Photomask Technology 2009, 748828 (23 September 2009); https://doi.org/10.1117/12.834787
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Cited by 13 scholarly publications.
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KEYWORDS
Photomasks

Line edge roughness

Semiconducting wafers

Nanoimprint lithography

Image filtering

Edge roughness

Spatial frequencies

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