Paper
12 February 2010 Near-infrared quenching effects on mid-infrared quantum cascade lasers
Dingkai Guo, Fow-Sen Choa, Liwei Cheng, Xing Chen
Author Affiliations +
Proceedings Volume 7616, Novel In-Plane Semiconductor Lasers IX; 76161R (2010) https://doi.org/10.1117/12.842765
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
We report in this work the near-Infrared optical quenching effects on mid-Infrared Quantum Cascade Lasers (QCLs). The quenching effect is both intensity and wavelength dependent. A group of strain-compensated InGaAs/InAlAs, 4.8μm mid-IR QCLs, were used in the experiment. The pump lasers are near-IR lasers with wavelengths ranging from 1550nm to visible wavelength around 500nm. When the pump lasers have their lasing wavelengths shorter than 950 nm, it seems that majority of the generated electrons are excited above the conduction band edge of the InAlAs material and be swept off as photoconductive current without significantly affecting the QCL intersubband operations. So their quenching effect is weaker. We also observe that a near-IR laser with good quenching ability can modulate the mid-IR laser with speeds way above 100 MHz, which excludes the possibility of a thermal origin of these results.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dingkai Guo, Fow-Sen Choa, Liwei Cheng, and Xing Chen "Near-infrared quenching effects on mid-infrared quantum cascade lasers", Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76161R (12 February 2010); https://doi.org/10.1117/12.842765
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Quantum cascade lasers

Mid-IR

Modulation

Quenching (fluorescence)

Resistance

Waveguides

Argon ion lasers

Back to Top