Paper
1 April 2010 50 keV electron-beam projection maskless lithography (PML2): results obtained with 2,500 programmable 12.5-nm sized beams
Christof Klein, Jan Klikovits, Laszlo Szikszai, Elmar Platzgummer, Hans Loeschner
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Abstract
Projection Mask-Less Lithography (PML2) is a potentially cost-effective electron multi-beam solution for the 16 nm hp ITRS technology node and beyond. First results obtained with a PML2 Testbench are presented where a programmable Aperture Plate System (APS) was used to generate ca. 2500 micrometer-sized beams which are projected onto wafer level with 200x demagnification. The APS contains CMOS electronics which allows for addressable deflection of selected beams; only non-deflected beams make it to the wafer surface to achieve 12.5 nm spot size. Beam energy (50keV) and current density (~2 A/cm2) are the same as in future PML2 production tools. Thus, the results obtained with the PML2 Testbench unambiguously prove the patterning capabilities of the PML2 technology.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christof Klein, Jan Klikovits, Laszlo Szikszai, Elmar Platzgummer, and Hans Loeschner "50 keV electron-beam projection maskless lithography (PML2): results obtained with 2,500 programmable 12.5-nm sized beams", Proc. SPIE 7637, Alternative Lithographic Technologies II, 76370B (1 April 2010); https://doi.org/10.1117/12.846544
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CITATIONS
Cited by 7 scholarly publications.
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KEYWORDS
Semiconducting wafers

Maskless lithography

Electronics

Lithography

Silicon

Scanning electron microscopy

CMOS technology

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