Non-traditional resist designs using molecular resists: positive tone cross-linked and non-chemically amplified molecular resists

Richard A. Lawson; David E. Noga; Jing Cheng; Laren M. Tolbert; Clifford L. Henderson

doi:10.1117/12.848419

30 March 2010 Non-traditional resist designs using molecular resists: positive tone cross-linked and non-chemically amplified molecular resists

Richard A. Lawson, David E. Noga, Jing Cheng, Laren M. Tolbert, Clifford L. Henderson

Author Affiliations +

Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 76392F (2010) https://doi.org/10.1117/12.848419
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Two different types of non-traditional molecular resists were synthesized and characterized. A positive-tone cross-linked molecular resist was made that functions by first forming an etch resistant film via thermal cross-linking of vinyl ether functionalized small molecules followed by patterning of the film via acid catalyzed cleavage of the resulting acetal bonds. DPA-2VE, a single multi-functional molecular resist of this type, showed DUV sensitivity of 7 mJ/cm² and a contrast of 5.2 for development in either organic solvent or aqueous base. Using high resolution patterning with a 100 keV e-beam, it was possible to demonstrate feature resolutions down to 40 nm. When 0.26N TMAH was used as a developer, the dose-to-size was 84 μC/cm² with a 3σ LER of 14.2 nm. Using MIBK as a developer, the dose-to-size was 104 μC/cm² and the 3σ LER was 7.4 nm. A series of non-chemically amplified molecular resists based on using 2- nitrobenzyl ethers as photosensitive protecting groups were also made. One formulation showed a DUV sensitivity of 1 mJ/cm², while another formulation which showed the best contrast of 8.3 obtained at a sensitivity of 10 mJ/cm². However, under 100 keV e-beam patterning, the 2-nitrobenzyl ether protected materials showed little to no response even up to 3000 μC/cm².

Citation Download Citation

Richard A. Lawson, David E. Noga, Jing Cheng, Laren M. Tolbert, and Clifford L. Henderson "Non-traditional resist designs using molecular resists: positive tone cross-linked and non-chemically amplified molecular resists", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76392F (30 March 2010); https://doi.org/10.1117/12.848419

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