Paper
2 April 2010 Decomposition strategies for self-aligned double patterning
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Abstract
Spacer technology, a self-aligned double patterning (SADP) technique, has been drawing more and more attention due to its less stringent overlay requirements compared to other double-patterning methods. However, use of SADP techniques was previously limited by the lack of flexibility in terms of decomposition options , and significant developments were mainly implemented for 1D-type applications for memory. In this paper, we extend the SADP technique into the logic field. A matrix of design rule extraction structures was created by GLOBALFOUNDRIES, which was then decomposed into 2-mask SADP patterning solutions by Cadence Design Systems, and wafers were manufactured by Applied Materials. The wafers were processed in both positive and negative spacer tones, and then we evaluate the design capabilities of SADP for logic BEOL patterning on pitches from 56nm to 64nm. It shows that the SADP has big advantage over other pitch splitting techniques such as LELE in terms of design rules, overlay, and CD uniformity control. With SADP, the most challenging design rules for BEOL such as tip-to-tip and tip-to-line can be reduced 50% from 80 nm to 40 nm.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuansheng Ma, Jason Sweis, Chris Bencher, Huixiong Dai, Yongmei Chen, Jason P. Cain, Yunfei Deng, Jongwook Kye, and Harry J. Levinson "Decomposition strategies for self-aligned double patterning", Proc. SPIE 7641, Design for Manufacturability through Design-Process Integration IV, 76410T (2 April 2010); https://doi.org/10.1117/12.848387
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Cited by 31 scholarly publications.
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KEYWORDS
Photomasks

Optical lithography

Etching

Dielectrics

Double patterning technology

Image processing

Logic

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