Substrate temperature influence on the properties of InGaZnO thin films grown by PLD technique

Jiangbo Chen; Li Wang; Xiaojing Wan; Xueqiong Su; Le Kong

doi:10.1117/12.865692

22 October 2010 Substrate temperature influence on the properties of InGaZnO thin films grown by PLD technique

Jiangbo Chen, Li Wang, Xiaojing Wan, Xueqiong Su, Le Kong

Proceedings Volume 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology; 76580E (2010) https://doi.org/10.1117/12.865692
Event: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2010, Dalian, China

Abstract

In this paper, the effects of substrate temperature during film growth at relative high temperature have been reported. The IGZO thin films were fabricated by means of pulse laser deposition (PLD) with the InGaZnO (In₂O₃: Ga₂O₃: ZnO=1: 1: 8 mol %) target. The substrate temperature altered from room temperature (RT) to 800 °C. The product thin films were characterized rigorously by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-VIS spectrometer, Halleffect investigation and X-ray photoelectron spectroscopy (XPS). The IGZO films was with smooth surface, high transmission in the visible spectral range (about 75-92 %), carrier mobility > 8.0 cm²/(V·s) and carrier concentration at about 10¹⁸ cm^-3. Finally, the character changes influenced by temperature were obtained from analysis results. This task may benefit to a flat panel display in the process of thin film transistors(TFT) fabrications and improvements.

Citation Download Citation

Jiangbo Chen, Li Wang, Xiaojing Wan, Xueqiong Su, and Le Kong "Substrate temperature influence on the properties of InGaZnO thin films grown by PLD technique", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76580E (22 October 2010); https://doi.org/10.1117/12.865692

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