A New Process For Contrast Enhancement Of Photoresist Patterns

Yoshimitsu Okuda; Tohru Ohkuma; Yukio Takashima; Yukio Miyai; Morio Inoue

doi:10.1117/12.940309

25 August 1987 A New Process For Contrast Enhancement Of Photoresist Patterns

Yoshimitsu Okuda, Tohru Ohkuma, Yukio Takashima, Yukio Miyai, Morio Inoue

Proceedings Volume 0771, Advances in Resist Technology and Processing IV; (1987) https://doi.org/10.1117/12.940309
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

A new simple photoresist process for contrast enhancement of submicron pattern plofiles is proposed. This process consists of the conventional positive photoresist process steps and a deep UV flood exposure step after the image exposure . In the printing experiments novolac resists and g-line steppers with N.A. value of 0.42 and 0.35 are used. Using the new process 0.6 μm line and space are distinctly resolved for S-1400 (Shipley). The resolution is improved by 0.2 μm and the edge acuity of 80-90° is obtained compared with 60-65° by the conventional process for OFPR-500053 (Tokyo Ohka dyed photoresist). The effect of contrast enhancement is verified by the meausrements of photoresist dissolution rate in the developer. Dissolution rate in the new process is suppressed by 60% of that in the conventional process at the surface of resists. The contrast enhancement with the use of the new process is confirmed by the simultation based on the program SAMPLE in which the results of the dissolution rate measurements are used.

Citation Download Citation

Yoshimitsu Okuda, Tohru Ohkuma, Yukio Takashima, Yukio Miyai, and Morio Inoue "A New Process For Contrast Enhancement Of Photoresist Patterns", Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); https://doi.org/10.1117/12.940309

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