Paper
18 August 2010 Pyroelectric photodetector based on ferroelectric crystal-semiconductor thin film heterostructure
Armen Poghosyan, N. R. Aghamalyan, R. Guo, R. K. Hovsepyan, E. S. Vardanyan
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Abstract
Very important advantage of ZnO thin films is an opportunity of use in the composite heterostructures opening opportunities for development of ZnO-based optoelectronics devices. In this work we report the preparation of ferroelectric crystal - ZnO thin film heterostructures by vacuum deposition method and creation of new type of pyroelectric photodetector. The ferroelectric field effect transistor has been prepared using ZnO:Li films as transistor channel and LiNbO3 and TGS crystals as pyroelectric sensitive element. The photoelectric properties (currents ratio, charge carriers mobility, ampere-watt sensitivity in IR diapason, NEP sensitivity, and photocurrent kinetics) of prepared heterostructures were investigated and first samples of novel pyroelectric photodetector with high sensitivity and detectability were prepared.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Armen Poghosyan, N. R. Aghamalyan, R. Guo, R. K. Hovsepyan, and E. S. Vardanyan "Pyroelectric photodetector based on ferroelectric crystal-semiconductor thin film heterostructure", Proc. SPIE 7781, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IV, 778117 (18 August 2010); https://doi.org/10.1117/12.863037
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KEYWORDS
Crystals

Pyroelectric detectors

Heterojunctions

Field effect transistors

Thin films

Transistors

Infrared radiation

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