Development of new FIB technology for EUVL mask repair

Fumio Aramaki; Takashi Ogawa; Osamu Matsuda; Tomokazu Kozakai; Yasuhiko Sugiyama; Hiroshi Oba; Anto Yasaka; Tsuyoshi Amano; Hiroyuki Shigemura; Osamu Suga

doi:10.1117/12.879609

7 April 2011 Development of new FIB technology for EUVL mask repair

Fumio Aramaki, Takashi Ogawa, Osamu Matsuda, Tomokazu Kozakai, Yasuhiko Sugiyama, Hiroshi Oba, Anto Yasaka, Tsuyoshi Amano, Hiroyuki Shigemura, Osamu Suga

Author Affiliations +

Proceedings Volume 7969, Extreme Ultraviolet (EUV) Lithography II; 79691C (2011) https://doi.org/10.1117/12.879609
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

The next generation EUVL masks beyond hp15nm are difficult to repair for the current repair technologies including focused ion beam (FIB) and electron beam (EB) in view of the minimum repairable size. We developed a new FIB technology to repair EUVL masks. Conventional FIB use gallium ions (Ga⁺) generated by a liquid metal ion source (LMIS), but the new FIB uses hydrogen ions (H₂+) generated by a gas field ion source (GFIS). The minimum reaction area of H₂⁺ FIB is theoretically much smaller than that of EB. We investigated the repair performance of H₂⁺ FIB. In the concrete, we evaluated image resolution, scan damage, etching rate, material selectivity of etching and actinic image of repaired area. The most important result is that there was no difference between the repaired area and the non-repaired one on actinic images. That result suggests that the H₂⁺ GFIS technology is a promising candidate for the solution to repair the next generation EUVL masks beyond hp15nm.

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Fumio Aramaki, Takashi Ogawa, Osamu Matsuda, Tomokazu Kozakai, Yasuhiko Sugiyama, Hiroshi Oba, Anto Yasaka, Tsuyoshi Amano, Hiroyuki Shigemura, and Osamu Suga "Development of new FIB technology for EUVL mask repair", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79691C (7 April 2011); https://doi.org/10.1117/12.879609

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