Model-based scanner tuning for process optimization

Rafael Aldana; Venu Vellanki; Wenjin Shao; Ronald Goossens; Zongchang Yu; Xu Xie; Yu Cao; Koen Schreel; Peter Lee; Won Kim; Tjitte Nooitgedagt

doi:10.1117/12.882764

1 April 2011 Model-based scanner tuning for process optimization

Rafael Aldana, Venu Vellanki, Wenjin Shao, Ronald Goossens, Zongchang Yu, Xu Xie, Yu Cao, Koen Schreel, Peter Lee, Won Kim, Tjitte Nooitgedagt

Author Affiliations +

Proceedings Volume 7985, 27th European Mask and Lithography Conference; 79850L (2011) https://doi.org/10.1117/12.882764
Event: 27th European Mask and Lithography Conference, 2011, Dresden, Germany

Abstract

Traditional scanner matching methods have been based in 1D proximity matching targets and the use of wafer-based CD metrology to characterize both the initial mismatch as well as the sensitivity of CDs to scanner tuning knobs. One such method is implemented in ASML Pattern Matcher, which performs a linear optimization based on user provided CD sensitivities and pre-match data. The user provided data usually comes from wafer exposures done at multiple scanner illumination conditions measured with CD-SEM. In the near future ASML plans to provide the capability to support YieldStar CD data for Pattern Matcher which will collect CD data with higher precision and much faster turn-around-time that CD-SEM. Pattern Matcher has been used successfully in multiple occasions. Results for one such occasion are shown in Figure 1 which presents the through pitch mismatch behavior of one ASML XT:1400F with respect to an ASML XT:1400E for a 32nm contact layer.

Citation Download Citation

Rafael Aldana, Venu Vellanki, Wenjin Shao, Ronald Goossens, Zongchang Yu, Xu Xie, Yu Cao, Koen Schreel, Peter Lee, Won Kim, and Tjitte Nooitgedagt "Model-based scanner tuning for process optimization", Proc. SPIE 7985, 27th European Mask and Lithography Conference, 79850L (1 April 2011); https://doi.org/10.1117/12.882764

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