Investigating the intrinsic cleanliness of automated handling designed for EUV mask pod-in-pod systems

O. Brux; P. van der Walle; J. C. J. van der Donck; P. Dress

doi:10.1117/12.896908

13 October 2011 Investigating the intrinsic cleanliness of automated handling designed for EUV mask pod-in-pod systems

O. Brux, P. van der Walle, J. C. J. van der Donck, P. Dress

Proceedings Volume 8166, Photomask Technology 2011; 81662S (2011) https://doi.org/10.1117/12.896908
Event: SPIE Photomask Technology, 2011, Monterey, California, United States

Abstract

Extreme Ultraviolet Lithography (EUVL) is the most promising solution for technology nodes 16nm (hp) and below. However, several unique EUV mask challenges must be resolved for a successful launch of the technology into the market. Uncontrolled introduction of particles and/or contamination into the EUV scanner significantly increases the risk for device yield loss and potentially scanner down-time. With the absence of a pellicle to protect the surface of the EUV mask, a zero particle adder regime between final clean and the point-of-exposure is critical for the active areas of the mask. A Dual Pod concept for handling EUV masks had been proposed by the industry as means to minimize the risk of mask contamination during transport and storage. SuSS-HamaTech introduces MaskTrackPro InSync as a fully automated solution for the handling of EUV masks in and out of this Dual Pod System and therefore constitutes an interface between various tools inside the Fab. The intrinsic cleanliness of each individual handling and storage step of the inner shell (EIP) of this Dual Pod and the EUV mask inside the InSync Tool has been investigated to confirm the capability for minimizing the risk of cross-contamination. An Entegris Dual Pod EUV-1000A-A110 has been used for the qualification. The particle detection for the qualification procedure was executed with the TNO's RapidNano Particle Scanner, qualified for particle sizes down to 50nm (PSL equivalent). It has been shown that the target specification of < 2 particles @ 60nm per 25 cycles has been achieved. In case where added particles were measured, the EIP has been identified as a potential root cause for Ni particle generation. Any direct Ni-Al contact has to be avoided to mitigate the risk of material abrasion.

Citation Download Citation

O. Brux, P. van der Walle, J. C. J. van der Donck, and P. Dress "Investigating the intrinsic cleanliness of automated handling designed for EUV mask pod-in-pod systems", Proc. SPIE 8166, Photomask Technology 2011, 81662S (13 October 2011); https://doi.org/10.1117/12.896908

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