Properties of niobium oxide films deposited by pulsed DC reactive magnetron sputtering

Yuchuan Shao; Kui Yi; Ming Fang; Junchao Zhang

doi:10.1117/12.910188

12 January 2012 Properties of niobium oxide films deposited by pulsed DC reactive magnetron sputtering

Yuchuan Shao, Kui Yi, Ming Fang, Junchao Zhang

Proceedings Volume 8206, Pacific Rim Laser Damage 2011: Optical Materials for High Power Lasers; 82060M (2012) https://doi.org/10.1117/12.910188
Event: Pacific Rim Laser Damage Symposium: Optical Materials for High Power Lasers, 2011, Shanghai, China

Abstract

Nb₂O₅ thin films at various cathode power and substrate bias voltages were deposited by pulsed DC reactive magnetron sputtering of a metallic Nb target in a pure oxygen atmosphere. The characteristics of the films have been studied using spectrometer, atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM). Laser damage tests at 1064 nm wavelength with pulse duration of 12 ns were conducted on the single-layer systems. Results indicate that the cathode power may not be an important impact-factor of the LIDT of Nb₂O₅ thin films but substrate bias voltage has significant influence on the laser resistance of Niobium oxides films. The maximum laser induced damage threshold (LIDT) of 28.8 J/cm₂ was obtained for the film deposited at substrate bias voltage of -60V.

Citation Download Citation

Yuchuan Shao, Kui Yi, Ming Fang, and Junchao Zhang "Properties of niobium oxide films deposited by pulsed DC reactive magnetron sputtering", Proc. SPIE 8206, Pacific Rim Laser Damage 2011: Optical Materials for High Power Lasers, 82060M (12 January 2012); https://doi.org/10.1117/12.910188

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