Paper
19 January 1988 Selected Photoluminesence Transitions In Unintentionally Doped Inp Grown By Molecular Beam Epitaxy
Shlomo Ovadia, A. Iliadis
Author Affiliations +
Abstract
Photoluminesence data of unintentionally doped InP grown by molecular beam epitaxy are presented in order to clarify the origin of the 1.380 eV emission band and the 1.360 eV radiative transition. The 1.380 eV emission band was found to consist of a number of transitions which were attributed to Ca, Mg and C impurities. The SIMS analysis is in support of this result. The 1.360 eV radiative transition has been previously reported to be related to a phosphorus vacancy complex. Our results are in support of this observation. In addition, a split of 0.8 meV has been observed for this peak and was attributed to elastic strain. The effect of these transitions on the optical properties of the epitaxial InP is discussed.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shlomo Ovadia and A. Iliadis "Selected Photoluminesence Transitions In Unintentionally Doped Inp Grown By Molecular Beam Epitaxy", Proc. SPIE 0822, Raman and Luminescence Spectroscopy in Technology, (19 January 1988); https://doi.org/10.1117/12.941932
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KEYWORDS
Phosphorus

Calcium

Magnesium

Chemical species

Molecular beam epitaxy

Excitons

Raman spectroscopy

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