Thermal and optical properties of both ridge and buried structures laser including waveguide layer

Joël Jacquet; Abdessamad Ou-Sair; Mickael Faugeron; Emeric Mercier; Jad Taki; Harmonie Sakala; Mathieu Jeanin; Thomas Molines

doi:10.1117/12.909496

28 February 2012 Thermal and optical properties of both ridge and buried structures laser including waveguide layer

Joël Jacquet, Abdessamad Ou-Sair, Mickael Faugeron, Emeric Mercier, Jad Taki, Harmonie Sakala, Mathieu Jeanin, Thomas Molines

Author Affiliations +

Proceedings Volume 8255, Physics and Simulation of Optoelectronic Devices XX; 825527 (2012) https://doi.org/10.1117/12.909496
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

Thermal and optical properties of Buried structures laser are simulated in the case where we include a waveguide layer beneath the Multi Quantum Well's. The role of this waveguide is twofold. On one hand It attracts the optical field on lower side of the active waveguide where the losses are low due to n doped side of the laser. On the other hand, we can improve the coupling coefficient to the fiber by increasing the divergence of the beam together with its waist increase. Finite element software is used to calculate thermal resistance of the structures. Beam Propagation method is use for optical modeling. We optimize active waveguide composition and thickness for various multi-quantum wells number. Optical modeling is used to check the single mode operation of the structure together with beam shape optimization according to the objectives. Waveguide parameters are optimized to reduce the thermal resistance of investigated structures. Trade of between thermal and optical properties is discussed.

Citation Download Citation

Joël Jacquet, Abdessamad Ou-Sair, Mickael Faugeron, Emeric Mercier, Jad Taki, Harmonie Sakala, Mathieu Jeanin, and Thomas Molines "Thermal and optical properties of both ridge and buried structures laser including waveguide layer", Proc. SPIE 8255, Physics and Simulation of Optoelectronic Devices XX, 825527 (28 February 2012); https://doi.org/10.1117/12.909496

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