Effect of boron on the surface and optical properties for (B)InAs/GaAs self-assembled quantum dots grown by MOCVD

Pengyu Wang; Qi Wang; Xin Guo; Zhigang Jia; Tianhe Li; Xiaomin Ren; Shiwei Cai

doi:10.1117/12.917901

28 November 2011 Effect of boron on the surface and optical properties for (B)InAs/GaAs self-assembled quantum dots grown by MOCVD

Pengyu Wang, Qi Wang, Xin Guo, Zhigang Jia, Tianhe Li, Xiaomin Ren, Shiwei Cai

Author Affiliations +

Proceedings Volume 8308, Optoelectronic Materials and Devices VI; 83082C (2011) https://doi.org/10.1117/12.917901
Event: SPIE/OSA/IEEE Asia Communications and Photonics, 2011, Shanghai, China

Abstract

We have fabricated strain-reduced InAs quantum dots (QDs) by boron incorporation grown on GaAs(100) substrate. The size of uncapped InAs QDs was increased with boron incorporation. The effect of boron on the PL spectra of InAs QDs capped by an InGaAs strain-reducing layer wasn't obvious. However, when boron atoms were incorporated in InAs QDs capped by a GaAs overgrown layer, the PL intensity was strongly enhanced, and the PL peak shifted towards a longer wavelength. It was found that the incorporation of boron atoms within the InAs QDs could drastically reduce the In/Ga intermixing effects during capping coverage.

Citation Download Citation

Pengyu Wang, Qi Wang, Xin Guo, Zhigang Jia, Tianhe Li, Xiaomin Ren, and Shiwei Cai "Effect of boron on the surface and optical properties for (B)InAs/GaAs self-assembled quantum dots grown by MOCVD", Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 83082C (28 November 2011); https://doi.org/10.1117/12.917901

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