Paper
17 May 2012 High-performance interband cascade lasers emitting between 3.3 and 3.5 microns
J. D. Bruno, R. P. Leavitt, J. L. Bradshaw, K. M. Lascola, J. T. Pham, F. J. Towner
Author Affiliations +
Abstract
Semiconductor laser performance in the 3 to 4 micron wavelength region has lagged behind lasers at longer and shorter wavelengths. However, recent advances by the group at the Naval Research Laboratory (NRL) have markedly changed this situation, and in a recent collaboration with the NRL group, we demonstrated high performance interband cascade lasers at 3.8 microns. In this work, we present results extending this earlier work to shorter wavelengths. In particular, we designed four new interband cascade lasers at target wavelengths between 3.3 and 3.5 microns. Initial testing of broad area devices show threshold current densities of ~230 A/cm2 at 300K, almost a factor of two lower than the ~425 A/cm2 results obtained on the broad area devices at 3.8 microns. In this paper, we present performance data on these broad area lasers and also data on narrow ridge devices fabricated from the same material.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. D. Bruno, R. P. Leavitt, J. L. Bradshaw, K. M. Lascola, J. T. Pham, and F. J. Towner "High-performance interband cascade lasers emitting between 3.3 and 3.5 microns", Proc. SPIE 8374, Next-Generation Spectroscopic Technologies V, 83740L (17 May 2012); https://doi.org/10.1117/12.919346
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Quantum cascade lasers

Continuous wave operation

Gallium antimonide

Laser applications

Laser damage threshold

Laser development

Semiconductor lasers

RELATED CONTENT


Back to Top