III-V nitride semiconductors for solar hydrogen production

Vijay Parameshwaran; Chad Gallinat; Ryan W. Enck; Anand V. Sampath; Paul H. Shen; Tevye Kuykendall; Shaul Aloni; Michael Wraback; Bruce M. Clemens

doi:10.1117/12.925200

24 May 2012 III-V nitride semiconductors for solar hydrogen production

Vijay Parameshwaran, Chad Gallinat, Ryan W. Enck, Anand V. Sampath, Paul H. Shen, Tevye Kuykendall, Shaul Aloni, Michael Wraback, Bruce M. Clemens

Author Affiliations +

Proceedings Volume 8377, Energy Harvesting and Storage: Materials, Devices, and Applications III; 83770B (2012) https://doi.org/10.1117/12.925200
Event: SPIE Defense, Security, and Sensing, 2012, Baltimore, Maryland, United States

Abstract

Photoelectrochemical cells are devices that can convert solar radiation to hydrogen gas through a water decomposition process. In this process, energy is converted from incident photons to the bonds of the generated H₂ molecules. The solar radiation absorption, electron-hole pair splitting, and photoelectrolysis half reactions all occur in the vicinity of the electrode-electrolyte interface. As a result, engineering the electrode material and its interaction with the electrolyte is important in investigating and improving the energy conversion process in these devices. III-V nitride materials are promising candidates for photoelectrochemical energy applications. We demonstrate solar-to-hydrogen conversion in these cells using p-type GaN and n-type InGaN as a photocathode and photoanode material, respectively. Additionally, we demonstrate heteroepitaxial MOCVD growth of GaP on Si, enabling future work in developing GaPN as a photocathode material.

Citation Download Citation

Vijay Parameshwaran, Chad Gallinat, Ryan W. Enck, Anand V. Sampath, Paul H. Shen, Tevye Kuykendall, Shaul Aloni, Michael Wraback, and Bruce M. Clemens "III-V nitride semiconductors for solar hydrogen production", Proc. SPIE 8377, Energy Harvesting and Storage: Materials, Devices, and Applications III, 83770B (24 May 2012); https://doi.org/10.1117/12.925200

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