Paper
11 May 2012 Improving beam quality in broad area semiconductor amplifiers
Ramon Herrero, Muriel Botey, Nikhil P. Kumar, Kestutis Staliunas
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Abstract
Broad area semiconductors lasers and amplifiers are of technological relevance because of their high conversion efficiency and high output power, in a wide range of wavelengths. However, due to their specific waveguiding planar geometry, which is unique to this kind of heterostructures, the beam is usually of low spatial and temporal quality. Therefore, the beam quality restricts their potential use. We propose to improve the beam quality of semiconductors lasers and amplifiers using a two-dimensional spatial modulation of both the refractive index and the optical gain/loss, on the scale of the wavelength. The modulation of the refractive index and gain/loss function on a small scale modifies the spatial dispersion and introduces anisotropic gain on a large scale. As a result, the modified dispersion gives rise to interesting and technologically useful effects, such as spatial filtering or focalization behind the amplifier. We show that such effects can be achieved considering a modulated injection current which imposes a periodic spatial modulation of the active layer of the semiconductor.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ramon Herrero, Muriel Botey, Nikhil P. Kumar, and Kestutis Staliunas "Improving beam quality in broad area semiconductor amplifiers", Proc. SPIE 8432, Semiconductor Lasers and Laser Dynamics V, 843222 (11 May 2012); https://doi.org/10.1117/12.922849
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KEYWORDS
Modulation

Semiconductors

Crystals

Refractive index

Optical amplifiers

Diffraction

Semiconductor lasers

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