Low-temperature solution-processed metal oxide buffer layers fulfilling large area production requirements

T. Stubhan; I. Litzov; Ning Li; H. Q. Wang; J. Krantz; F. Machui; M. Steidl; H. Oh; G. J. Matt; C. J. Brabec

doi:10.1117/12.945866

27 September 2012 Low-temperature solution-processed metal oxide buffer layers fulfilling large area production requirements

T. Stubhan, I. Litzov, Ning Li, H. Q. Wang, J. Krantz, F. Machui, M. Steidl, H. Oh, G. J. Matt, C. J. Brabec

Author Affiliations +

Proceedings Volume 8477, Organic Photovoltaics XIII; 84770J (2012) https://doi.org/10.1117/12.945866
Event: SPIE Organic Photonics + Electronics, 2012, San Diego, California, United States

Abstract

This paper is a review of our previous work on the field of low temperature, solution processed metal oxide buffer layers published in various journals. Our work focuses on zinc oxide (ZnO) and aluminum-doped zinc oxide (AZO) as n-type and molybdenum oxide (MoO₃) as p-type solution processed buffer layer. In addition to that, we investigate the surface modification of AZO using phosphonic acid-anchored aliphatic and fullerene self assembled monolayers (SAMs).

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T. Stubhan, I. Litzov, Ning Li, H. Q. Wang, J. Krantz, F. Machui, M. Steidl, H. Oh, G. J. Matt, and C. J. Brabec "Low-temperature solution-processed metal oxide buffer layers fulfilling large area production requirements", Proc. SPIE 8477, Organic Photovoltaics XIII, 84770J (27 September 2012); https://doi.org/10.1117/12.945866

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