LWIR (long wave infrared) and quantum dot research at the U.S.
Army Research Laboratory (ARL)

Parvez N. Uppal

doi:10.1117/12.972460

15 October 2012 LWIR (long wave infrared) and quantum dot research at the U.S. Army Research Laboratory (ARL)

Parvez N. Uppal

Proceedings Volume 8512, Infrared Sensors, Devices, and Applications II; 851206 (2012) https://doi.org/10.1117/12.972460
Event: SPIE Optical Engineering + Applications, 2012, San Diego, California, United States

Abstract

This paper reviews the work of several teams at ARL. In the quantum well arena we are developing bulk InAsSb material for LWIR detectors type for high performance focal plane array applications, so far we have observed that the minority carrier lifetimes in the type II SLS material have been short. Short lifetimes present a major barrier towards the realization of high performance focal plane arrays. This paper discusses photoluminescence observed in InAsSb materials and our observation that the bandgap bowing parameter is much bigger than earlier studies have shown, opening up the possibility that up to 12 micron wavelength cut-off can be achieved in InAsSb alloys. In the second section a summary of the work done by the III-V and IR device team is presented, the team is using quantum dots to enhance the efficiency of solar photovoltaic devices. We have discovered that doping the quantum dots is critical in enhancing the efficiency of the solar cells.

Citation Download Citation

Parvez N. Uppal "LWIR (long wave infrared) and quantum dot research at the U.S. Army Research Laboratory (ARL)", Proc. SPIE 8512, Infrared Sensors, Devices, and Applications II, 851206 (15 October 2012); https://doi.org/10.1117/12.972460

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KEYWORDS

Solar cells

Long wavelength infrared

Quantum dots

Solar energy

Gallium arsenide

Laser sintering

Photons

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