Roughness and variability in EUV lithography: Who is to blame? (part 1)

Alessandro Vaglio Pret; Roel Gronheid; Todd R. Younkin; Gustaf Winroth; John J. Biafore; Yusuke Anno; Kenji Hoshiko; Vassilios Constantoudis

doi:10.1117/12.2011584

1 April 2013 Roughness and variability in EUV lithography: Who is to blame? (part 1)

Alessandro Vaglio Pret, Roel Gronheid, Todd R. Younkin, Gustaf Winroth, John J. Biafore, Yusuke Anno, Kenji Hoshiko, Vassilios Constantoudis

Author Affiliations +

Proceedings Volume 8679, Extreme Ultraviolet (EUV) Lithography IV; 86792O (2013) https://doi.org/10.1117/12.2011584
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Process variability in today’s EUV lithography might be a showstopper for features below 27nm dimensions. At these feature sizes, electrical devices are influenced by quantum effects and thus have to face the discrete behavior of light and matter. More in general, lithography uncertainties arise from each lithographic element: the source, the photomask, the optical system, and the photoresist. In order to individually assess all the different contributions to the final resist roughness, a EUV mask with known absorber pattern variability was used to expose different resists at different process conditions. CD-SEM analyses were performed on both mask absorber and resist pattern and then used to build a stochastic resist model. In this first paper, we present a complete characterization of the root causes which are responsible of the CD nonuniformity for 27nm half-pitch dense contact-holes exposed with the ASML NXE:3100 scanner installed at imec. Using the same stochastic model, a simulated evaluation to quantify the possible impact of the different elements composing the lithographic process is performed at higher numerical aperture.

Citation Download Citation

Alessandro Vaglio Pret, Roel Gronheid, Todd R. Younkin, Gustaf Winroth, John J. Biafore, Yusuke Anno, Kenji Hoshiko, and Vassilios Constantoudis "Roughness and variability in EUV lithography: Who is to blame? (part 1)", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86792O (1 April 2013); https://doi.org/10.1117/12.2011584

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available