Rectification of EUV-patterned contact holes using directed self-assembly

Roel Gronheid; Arjun Singh; Todd R. Younkin; Paulina Rincon Delgadillo; Paul Nealey; Boon Teik Chan; Kathleen Nafus; Ainhoa Romo Negreira; Mark Somervell

doi:10.1117/12.2012667

29 March 2013 Rectification of EUV-patterned contact holes using directed self-assembly

Roel Gronheid, Arjun Singh, Todd R. Younkin, Paulina Rincon Delgadillo, Paul Nealey, Boon Teik Chan, Kathleen Nafus, Ainhoa Romo Negreira, Mark Somervell

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Proceedings Volume 8682, Advances in Resist Materials and Processing Technology XXX; 86820A (2013) https://doi.org/10.1117/12.2012667
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

One critical problem with EUV patterning is the local CD variation of contact holes. The issue is especially problematic for patterning of sub-30nm hole dimensions. Although the EUV wavelength enables resolution of fine contact patterns, shot noise effects (both chemical and optical) result in high levels of CD non-uniformity. Directed self-assembly (DSA) offers the possibility of rectifying this non-uniformity. Since the resulting CD in this patterning approach is typically dictated by the polymer size, application of this technology in conjunction with an EUV-defined pre-pattern can theoretically improve the local CD uniformity. Integration approaches using both chemo- and grapho-epitaxy integration may be used to achieve DSA enabled uniformity improvement. The drawbacks and benefits of both approaches will be discussed. Finally, these types of DSA flows also enable frequency multiplication to achieve dense arrays from an initially sparse pattern. In this study, we will report on a variety of schemes to attain rectification and frequency multiplication.

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Roel Gronheid, Arjun Singh, Todd R. Younkin, Paulina Rincon Delgadillo, Paul Nealey, Boon Teik Chan, Kathleen Nafus, Ainhoa Romo Negreira, and Mark Somervell "Rectification of EUV-patterned contact holes using directed self-assembly", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86820A (29 March 2013); https://doi.org/10.1117/12.2012667

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