Fabrication of high resolution n-type 4H-SiC epitaxial layer alpha particle detectors, defect characterization and electronic noise analysis

Kelvin J. Zavalla; Sandeep K. Chaudhuri; Krishna C. Mandal

doi:10.1117/12.2027142

26 September 2013 Fabrication of high resolution n-type 4H-SiC epitaxial layer alpha particle detectors, defect characterization and electronic noise analysis

Kelvin J. Zavalla, Sandeep K. Chaudhuri, Krishna C. Mandal

Author Affiliations +

Proceedings Volume 8852, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XV; 88520D (2013) https://doi.org/10.1117/12.2027142
Event: SPIE Optical Engineering + Applications, 2013, San Diego, California, United States

Abstract

In the present work high-resolution alpha particle detectors have been fabricated on high quality 20 μm thick n-type 4H-SiC epitaxial layers. Schottky barrier detectors have been fabricated by depositing 10 nm thick nickel contacts on the Si face of the epilayers. The detectors were characterized using current-voltage (I-V), capacitance-voltage (CV), alpha spectroscopic measurements, and deep level transient spectroscopy (DLTS). I-V measurements revealed a barrier height of ~1.6 eV, diode ideality factor of 1.09, and leakage current of the order of 14 pA at an operating bias of 110 V. C-V measurements revealed low effective doping concentrations of 3.1 × 10¹⁴ cm^-3 in the epilayers. A micropipe density lower than 1 cm^-2 was evaluated in the epilayers. Pulse-height spectroscopy exhibited energy resolution as high as 0.37 % for 5.48 MeV alpha particles with a detector active area of 11 mm². A diffusion length of ~13.2 μm for holes has been determined in these detectors following a calculation based on a drift-diffusion model. Detailed electronic noise analysis in terms of equivalent noise charge (ENC) was carried out to study the effect of various noise components that contribute to the total electronic noise in the detection system. The noise analysis revealed that the white series noise due to the detector capacitance has substantial effect on the detector’s overall performance. DLTS measurements have revealed the presence of at least four majority (electron) carrier trap levels that can act as recombination/generation or trapping centers.

Citation Download Citation

Kelvin J. Zavalla, Sandeep K. Chaudhuri, and Krishna C. Mandal "Fabrication of high resolution n-type 4H-SiC epitaxial layer alpha particle detectors, defect characterization and electronic noise analysis", Proc. SPIE 8852, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XV, 88520D (26 September 2013); https://doi.org/10.1117/12.2027142

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available