Single Stripe High Power Laser Diodes Made By Metal-Organic Chemical Vapor Deposition

K Honda; T Mamine; M Ayabe

doi:10.1117/12.944345

9 August 1988 Single Stripe High Power Laser Diodes Made By Metal-Organic Chemical Vapor Deposition

K Honda, T Mamine, M Ayabe

Proceedings Volume 0893, High Power Laser Diodes and Applications; (1988) https://doi.org/10.1117/12.944345
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States

Abstract

Single stripe broad area GaAs/A1GaAs laser diodes were fabricated by Metal-Organic Chemical Vapor Deposition (MOCVD) epitaxial growth method. A CW output power of more than 1 watt was obtained with a single-lobed transverse-mode operation. The power conversion efficiency of the laser was as high as 33% with relatively low operating current. Both the transverse and longitudinal modes show basically single-lobed envelopes with fine components. The characteristics of these lasers can be explained by the mixed state of the fundamental and higher-order modes.

Citation Download Citation

K Honda, T Mamine, and M Ayabe "Single Stripe High Power Laser Diodes Made By Metal-Organic Chemical Vapor Deposition", Proc. SPIE 0893, High Power Laser Diodes and Applications, (9 August 1988); https://doi.org/10.1117/12.944345

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