Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation

Yanina G. Fedorenko; Mark A. Hughes; Julien L. Colaux; C. Jeynes; Russell M. Gwilliam; Kevin P. Homewood; Jin Yao; Dan W. Hewak; Tae-Hoon Lee; Stephen R. Elliott; B. Gholipour; Richard J. Curry

doi:10.1117/12.2037965

7 March 2014 Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation

Yanina G. Fedorenko, Mark A. Hughes, Julien L. Colaux, C. Jeynes, Russell M. Gwilliam, Kevin P. Homewood, Jin Yao, Dan W. Hewak, Tae-Hoon Lee, Stephen R. Elliott, B. Gholipour, Richard J. Curry

Author Affiliations +

Proceedings Volume 8982, Optical Components and Materials XI; 898213 (2014) https://doi.org/10.1117/12.2037965
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Doping of amorphous chalcogenide films of rather dissimilar bonding type and resistivity, namely, Ga-La-S, GeTe, and Ge-Sb-Te by means of ion implantation of bismuth is considered. To characterize defects induced by ionbeam implantation space-charge-limited conduction and capacitance-voltage characteristics of amorphous chalcogenide/silicon heterojunctions are investigated. It is shown that ion implantation introduces substantial defect densities in the films and their interfaces with silicon. This comes along with a gradual decrease in the resistivity and the thermopower coefficient. It is shown that conductivity in GeTe and Ge-Sb-Te films is consistent with the two-type carrier conduction model. It is anticipated that ion implantation renders electrons to become less localized than holes leading to electron conductivity in certain cases as, for example, in GeTe.

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Yanina G. Fedorenko, Mark A. Hughes, Julien L. Colaux, C. Jeynes, Russell M. Gwilliam, Kevin P. Homewood, Jin Yao, Dan W. Hewak, Tae-Hoon Lee, Stephen R. Elliott, B. Gholipour, and Richard J. Curry "Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation", Proc. SPIE 8982, Optical Components and Materials XI, 898213 (7 March 2014); https://doi.org/10.1117/12.2037965

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