Paper
27 February 2014 Development of broad spectral bandwidth hybrid QW/QD structures from 1000-1400 nm
N. Peyvast, S. Chen, K. Zhou, N. Babazadeh, A. A. Khozim, Z. Zhang, D. T. D. Childs, O. Wada, M. Hugues, R. A. Hogg, T. Kageyama, K. Nishi, K. Takemasa, M. Sugawara
Author Affiliations +
Abstract
We describe the development of hybrid quantum well (QW)/quantum dot (QD) active elements to achieve broad spectral bandwidth spontaneous emission and gain. We have previously reported that the placement of the QW within the active element is a critical factor in obtaining broad spectral bandwidth emission. We now present new designs to further broaden the spontaneous emission from hybrid structures by increasing the number of QD layers and dot density, and by using QDs with wider state-separation. Introducing chirped QD layers reduced the modulation in the spontaneous emission spectra, and by utilising self-heating effects and state-filling, a spontaneous emission with 3dB line-width of 350nm is obtained.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Peyvast, S. Chen, K. Zhou, N. Babazadeh, A. A. Khozim, Z. Zhang, D. T. D. Childs, O. Wada, M. Hugues, R. A. Hogg, T. Kageyama, K. Nishi, K. Takemasa, and M. Sugawara "Development of broad spectral bandwidth hybrid QW/QD structures from 1000-1400 nm", Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 900204 (27 February 2014); https://doi.org/10.1117/12.2039025
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KEYWORDS
Quantum wells

Optical coherence tomography

Continuous wave operation

Gallium arsenide

Indium gallium arsenide

Modulation

Quantum dots

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