Dependence of secondary-electron yield on aspect ratio of several trench patterns

Daisuke Bizen; Yasunari Sohda; Hideyuki Kazumi

doi:10.1117/12.2044662

2 April 2014 Dependence of secondary-electron yield on aspect ratio of several trench patterns

Daisuke Bizen, Yasunari Sohda, Hideyuki Kazumi

Author Affiliations +

Proceedings Volume 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII; 90500K (2014) https://doi.org/10.1117/12.2044662
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

Systematic understanding of the mechanism of secondary-electron (SE) emission is important to simulate an SEM image of a high-aspect-ratio (AR) structure. The simulation technique for a high-AR structure is useful for optimizing the observation conditions of SEM. Trench patterns with AR between 0.5 and 8 were fabricated on the same substrate, and dependence of SE yield on AR of the trench patterns was determined from SEM images for several landing energies of primary electrons. In addition, to understand the SE emission inside a trench, Monte-Carlo simulation of the signal intensity for Si was performed. The SEM observations and simulation results indicate that SEM image contrast at the bottom of a trench improves with decreasing landing energy (owing to a positive charging effect) and that reflection of SEs at the sidewall of a trench is essential for accurately estimating SE emission for the high-AR structure with AR over eight.

Citation Download Citation

Daisuke Bizen, Yasunari Sohda, and Hideyuki Kazumi "Dependence of secondary-electron yield on aspect ratio of several trench patterns", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90500K (2 April 2014); https://doi.org/10.1117/12.2044662

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