Paper
2 April 2014 Enhanced optical CD metrology by hybridization and azimuthal scatterometry
Shahin Zangooie, Jie Li, Karthik Boinapally, Peter Wilkens, Avraham Ver, Babak Khamsepour, Holger Schroder, John Piggot, Sanjay Yedur, Zhuan Liu, Jiangtao Hu
Author Affiliations +
Abstract
Reducing parameter correlations to enhance scatterometry measurement accuracy, precision and tool matching is a crucial component of every modeling effort. Parameter sensitivity can largely depend on the orientation of the plane of incidence relative to the grating orientation. Conventional scatterometry is done with the plane if incidence normal to the grating orientation, whereas azimuthal scatterometry allows measurements at an arbitrary angle or set of angles. A second technique examined in this paper is hybrid metrology where inputs from source tools such as CD-SEM and CD-AFM are used to determine values of critical parameters. The first examples shows LER sensitivity gains by measuring narrow resist lines in an orientation parallel with the long axis of the grating. Hybridization of LER results in a CD and SWA FMP improvement of about 60%. We also showcase the benefits of azimuthal scatterometry measuring resist lines with CD larger than the wavelengths of the incident light. A CD and SWA FMP reduction of about 60% and 30% is obtained using azimuthal scatterometry at 0, 45 and 90 degrees azimuth angles. Hybridization of the ARC SWA after RIE results in CD and resist SWA FMP improvements by over 60% and 30%, respectively.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shahin Zangooie, Jie Li, Karthik Boinapally, Peter Wilkens, Avraham Ver, Babak Khamsepour, Holger Schroder, John Piggot, Sanjay Yedur, Zhuan Liu, and Jiangtao Hu "Enhanced optical CD metrology by hybridization and azimuthal scatterometry", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90501G (2 April 2014); https://doi.org/10.1117/12.2046165
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Cited by 2 scholarly publications.
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KEYWORDS
Scatterometry

Critical dimension metrology

Line edge roughness

Scatter measurement

Semiconducting wafers

Metrology

Reactive ion etching

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