Spin-resolved study of direct band-gap recombination in bulk Ge

Fabio Pezzoli; Anna Giorgioni; Giovanni Isella; Sebastiano De Cesari; Emanuele Grilli; Mario Guzzi

doi:10.1117/12.2061795

28 August 2014 Spin-resolved study of direct band-gap recombination in bulk Ge

Fabio Pezzoli, Anna Giorgioni, Giovanni Isella, Sebastiano De Cesari, Emanuele Grilli, Mario Guzzi

Proceedings Volume 9167, Spintronics VII; 91670H (2014) https://doi.org/10.1117/12.2061795
Event: SPIE NanoScience + Engineering, 2014, San Diego, California, United States

Abstract

Recent investigations have demonstrated how temperature and doping can be employed as effective turning knobs to fully control the angular momentum of the photons emitted at the direct gap recombination of carriers with optically oriented spin in bulk Germanium. Here we emphasize how cooling of hot electrons via Coulomb collisions and intervalley scattering affect spin distribution within the conduction band, and explore the role of an additional degree of freedom, namely the excitation power density, in contributing to the electron spin relaxation.

Citation Download Citation

Fabio Pezzoli, Anna Giorgioni, Giovanni Isella, Sebastiano De Cesari, Emanuele Grilli, and Mario Guzzi "Spin-resolved study of direct band-gap recombination in bulk Ge", Proc. SPIE 9167, Spintronics VII, 91670H (28 August 2014); https://doi.org/10.1117/12.2061795

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