Spin injection and spin-orbit coupling in low-dimensional semiconductor nanostructures

Sebastian Heedt; Isabel Wehrmann; Thomas Gerster; Paul Wenk; Stefan Kettemann; Kamil Sladek; Hilde Hardtdegen; Andreas Bringer; Jürgen Schubert; Natalia Demarina; Detlev Grützmacher; Thomas Schäpers

doi:10.1117/12.2064867

28 August 2014 Spin injection and spin-orbit coupling in low-dimensional semiconductor nanostructures

Sebastian Heedt, Isabel Wehrmann, Thomas Gerster, Paul Wenk, Stefan Kettemann, Kamil Sladek, Hilde Hardtdegen, Andreas Bringer, Jürgen Schubert, Natalia Demarina, Detlev Grützmacher, Thomas Schäpers

Author Affiliations +

Proceedings Volume 9167, Spintronics VII; 916723 (2014) https://doi.org/10.1117/12.2064867
Event: SPIE NanoScience + Engineering, 2014, San Diego, California, United States

Abstract

Due to their strong spin-orbit coupling III-V semiconductor nanowires are excellent candidates for electrical spin manipulation. Therefore, a major goal is to tailor spin-orbit coupling in these devices. Direct electrical spin injection into quasi one-dimensional nanowires is demonstrated. Furthermore, the weak antilocalization effect was investigated in InAs nanowires. The quantum corrections to the conductivity are interpreted by developing a quasi-one-dimensional diffusive model. It turns out that by means of doping and electric gating the spin-lifetimes can be tuned significantly. By creating few-electron quantum dots inside these devices the impact of the confinement on the spin relaxation properties is investigated.

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Sebastian Heedt, Isabel Wehrmann, Thomas Gerster, Paul Wenk, Stefan Kettemann, Kamil Sladek, Hilde Hardtdegen, Andreas Bringer, Jürgen Schubert, Natalia Demarina, Detlev Grützmacher, and Thomas Schäpers "Spin injection and spin-orbit coupling in low-dimensional semiconductor nanostructures", Proc. SPIE 9167, Spintronics VII, 916723 (28 August 2014); https://doi.org/10.1117/12.2064867

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