Radoptic effect in InP and GaN for ultrafast scintillator applications

Kristina Brown; Paul Steele; Alden Curtis

doi:10.1117/12.2061135

4 September 2014 Radoptic effect in InP and GaN for ultrafast scintillator applications

Kristina Brown, Paul Steele, Alden Curtis

Proceedings Volume 9215, Radiation Detectors: Systems and Applications XV; 92150H (2014) https://doi.org/10.1117/12.2061135
Event: SPIE Optical Engineering + Applications, 2014, San Diego, California, United States

Abstract

Ultrafast scintillators are the subject of current research in an effort to better resolve ultrafast phenomena in high-energy density physics (HEDP) experiments. Despite extensive research on new scintillator materials, the essential mechanism of energy absorption, excitation, and photo-emission has remained unchanged for over 50 years. Recently, a new class of semiconductor detector has been developed utilizing the radoptic effect, or the change of refractive index when subjected to radiation, in an attempt to record events faster than conventional scintillators.¹ This study was designed for the observation of the radoptic effect by optical interferometry in different semiconductors to experimentally determine the fastest and most sensitive materials for the optimization of current radsensors.

Citation Download Citation

Kristina Brown, Paul Steele, and Alden Curtis "Radoptic effect in InP and GaN for ultrafast scintillator applications", Proc. SPIE 9215, Radiation Detectors: Systems and Applications XV, 92150H (4 September 2014); https://doi.org/10.1117/12.2061135

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