The study of the effect on the organic emitting diodes with (t-bt)2Ir(acac) as deep hole-trap

Ming Deng; Jian Zhong; Keke Gu; Jiule Chen; Yucheng Chen

doi:10.1117/12.2074781

2 September 2014 The study of the effect on the organic emitting diodes with (t-bt)₂Ir(acac) as deep hole-trap

Ming Deng, Jian Zhong, Keke Gu, Jiule Chen, Yucheng Chen

Proceedings Volume 9284, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronics Materials and Devices for Sensing and Imaging; 92840M (2014) https://doi.org/10.1117/12.2074781
Event: 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2014), 2014, Harbin, China

Abstract

Phosphorescent materials are crucial to improve the luminescence and efficiency of organic light emitting diodes, because its internal quantum efficiency can almost up to 100%. So the studying of optical and electrical properties of phosphorescent materials is propitious to the further development of phosphorescent OLED. Phosphorescent materials were generally doped into different host materials as emitting components, not only played an important role in emitting light but also had a great influence on carrier transport properties. (t-bt)₂Ir(acac) was a common yellow phosphorescent material. The optical and electrical properties of the blue DPVBi-based devices, adding (t-bt)₂Ir(acac) in different position, have studied. The results showed (t-bt)₂Ir(acac) has remarkable hole-trapping ability. Especially the ultrathin structure device, compared to the device without (t-bt)₂Ir(acac), had increased the luminance by about 60%, and the efficiency by about 97%.

Citation Download Citation

Ming Deng, Jian Zhong, Keke Gu, Jiule Chen, and Yucheng Chen "The study of the effect on the organic emitting diodes with (t-bt)₂Ir(acac) as deep hole-trap", Proc. SPIE 9284, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronics Materials and Devices for Sensing and Imaging, 92840M (2 September 2014); https://doi.org/10.1117/12.2074781

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