Paper
27 February 2015 GeSn waveguide structures for efficient light detection and emission
You-Long Lin, Yu-Hui Huang, Shao-Wei Chen, Guo-En Chang
Author Affiliations +
Proceedings Volume 9367, Silicon Photonics X; 93671G (2015) https://doi.org/10.1117/12.2078675
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
We report the fabrication and characterization of GeSn waveguide structures on Si substrates grown by molecular beam epitaxy for efficient light-detection and emission. For photodetectors, GeSn waveguide structures exhibit a higher optical response compared to a reference Ge device as revealed by the photocurrent experiments. For light-emission, room-temperature photoluminescence experiments show a redshifted emission wavelength for the GeSn samples compared to the Ge reference sample due to the Sn incorporation. Besides, we observe ripple characteristics in the amplified spontaneous emission spectrum of the GeSn waveguide structure, which are attributed to the waveguide modes. Those results suggest that GeSn waveguide structures are promising for high-performance Si-based lightdetectors and emitters integrable with Si electronics.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
You-Long Lin, Yu-Hui Huang, Shao-Wei Chen, and Guo-En Chang "GeSn waveguide structures for efficient light detection and emission", Proc. SPIE 9367, Silicon Photonics X, 93671G (27 February 2015); https://doi.org/10.1117/12.2078675
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KEYWORDS
Waveguides

Germanium

Photodetectors

Tin

Silicon

Luminescence

Resonators

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