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We report the fabrication and characterization of GeSn waveguide structures on Si substrates grown by molecular
beam epitaxy for efficient light-detection and emission. For photodetectors, GeSn waveguide structures exhibit a higher
optical response compared to a reference Ge device as revealed by the photocurrent experiments. For light-emission,
room-temperature photoluminescence experiments show a redshifted emission wavelength for the GeSn samples
compared to the Ge reference sample due to the Sn incorporation. Besides, we observe ripple characteristics in the
amplified spontaneous emission spectrum of the GeSn waveguide structure, which are attributed to the waveguide
modes. Those results suggest that GeSn waveguide structures are promising for high-performance Si-based lightdetectors
and emitters integrable with Si electronics.
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