Paper
18 March 2015 Alternative to ILT method for high-quality full-chip SRAF insertion
Author Affiliations +
Abstract
A novel approach to Sub-Resolution Assist Feature (SRAF) generation suitable for full-chip production scale applications is discussed in this work. The method enables generation of free-form SRAF insertion guidelines similar to those obtained by solving the inverse lithography problem. The guidelines encompass layout areas where total net effect of an elementary SRAF placement is positive taking into account all neighboring target features. The essence of the method is the assumption that the total impact of placing an elementary SRAF close to several neighboring features can be calculated as a sum of impacts to individual target features, or a simple mathematical function could be used to perform this calculation. Reduction of the SRAF insertion problem to the linear addition of “usefulness” metric on a grid enables the method to be exceptionally computationally efficient. Tests on an aggressive 28nm 100x100 um design contact array clips have confirmed 3+ orders of magnitude faster free-form SRAF generation as compared to commercially available ILT engines.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrey Lutich "Alternative to ILT method for high-quality full-chip SRAF insertion", Proc. SPIE 9426, Optical Microlithography XXVIII, 94260U (18 March 2015); https://doi.org/10.1117/12.2085724
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KEYWORDS
SRAF

Electroluminescence

Optical proximity correction

Photomasks

Image compression

Lithography

Model-based design

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