Paper
16 September 2015 Photodetector based on carbon nanotubes
A. Pavlov, E. Kitsyuk, R. Ryazanov, V. Timoshenkov, Y. Adamov
Author Affiliations +
Abstract
Photodetector based on carbon nanotubes (CNT) was investigated. Sensors were done on quartz and silicon susbtrate. Samples of photodetectors sensors were produced by planar technology. This technology included deposition of first metal layer (Al), lithography for pads formation, etching, and formation of local catalyst area by inverse lithography. Vertically-aligned multi-wall carbon nanotubes were directly synthesized on substrate by PECVD method. I-V analysis and spectrum sensitivity of photodetector were investigated for 0.4 μm - 1.2 μm wavelength. Resistivity of CNT layers over temperature was detected in the range of -20°C to 100°C.
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A. Pavlov, E. Kitsyuk, R. Ryazanov, V. Timoshenkov, and Y. Adamov "Photodetector based on carbon nanotubes", Proc. SPIE 9552, Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices VIII, 95520V (16 September 2015); https://doi.org/10.1117/12.2188176
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Cited by 1 scholarly publication.
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KEYWORDS
Silicon

Photodetectors

Sensors

Carbon nanotubes

Metals

Aluminum

Quartz

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