Field-effect memory transistors based on arrays of nanowires of a ferroelectric polymer

Ronggang Cai; Hailu G. Kassa; Alessio Marrani; Albert J. J. M. van Breemen; Gerwin H. Gelinck; Bernard Nysten; Zhijun Hu; Alain M. Jonas

doi:10.1117/12.2185677

17 September 2015 Field-effect memory transistors based on arrays of nanowires of a ferroelectric polymer

Ronggang Cai, Hailu G. Kassa, Alessio Marrani, Albert J. J. M. van Breemen, Gerwin H. Gelinck, Bernard Nysten, Zhijun Hu, Alain M. Jonas

Author Affiliations +

Proceedings Volume 9569, Printed Memory and Circuits; 95690G (2015) https://doi.org/10.1117/12.2185677
Event: SPIE Organic Photonics + Electronics, 2015, San Diego, California, United States

Abstract

Ferroelectric poly(vinylidene fluoride-co-trifluoroethylene), P(VDF-TrFE), is increasingly used in organic non-volatile memory devices, e.g., in ferroelectric field effect transistors (FeFETs). Here, we report on FeFETs integrating nanoimprinted arrays of P(VDF-TrFE) nanowires. Two previously-unreported architectures are tested, the first one consisting of stacked P(VDF-TrFE) nanowires placed over a continuous semiconducting polymer film; the second one consisting of a nanostriped blend layer wherein the semiconducting and ferroelectric components alternate regularly. The devices exhibit significant reversible memory effects, with operating voltages reduced compared to their continuous film equivalent, and with different possible geometries of the channels of free charge carriers accumulating in the semiconductor.

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Ronggang Cai, Hailu G. Kassa, Alessio Marrani, Albert J. J. M. van Breemen, Gerwin H. Gelinck, Bernard Nysten, Zhijun Hu, and Alain M. Jonas "Field-effect memory transistors based on arrays of nanowires of a ferroelectric polymer", Proc. SPIE 9569, Printed Memory and Circuits, 95690G (17 September 2015); https://doi.org/10.1117/12.2185677

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