Paper
1 September 2015 Low-frequency noise spectrum measurements of mid-wave infrared nBn detectors with superlattice absorbers
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Abstract
Type-II Strained Layer Superlattice (T2SLS) infrared photodetectors have been in ongoing development over the last decade with the goal of achieving lower dark currents and higher operating temperatures when com- pared to mercury cadmium telluride (MCT) detectors. The theoretically longer Auger recombination lifetime of T2SLS has potential to lower dark current but the presence of Shockley-Read-Hall (SRH) defects limits the recombination lifetime far below the Auger-limit. In order to reduce SRH-recombination, unipolar barriers have been incorporated into the energy bands of T2SLS materials in different forms, such as nBn, to improve performance. Here, noise spectra are presented for varyingly sized, near 90% quantum efficiency, nBn mid-wave infrared (MWIR) detectors with superlattice absorbing layers grown by MBE. Noise spectrum measurements are used to evaluate device performance and reveal mechanisms contributing to low frequency noise that often exceeds predictions based on ideal shot noise. Voltage and temperature dependent noise spectra were taken using an external trans-impedance amplifier with an internal, cooled impedance converter and feedback resistor.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eli A. Garduño, Damien L. Waden, Vincent M. Cowan, and Christian P. Morath "Low-frequency noise spectrum measurements of mid-wave infrared nBn detectors with superlattice absorbers", Proc. SPIE 9616, Nanophotonics and Macrophotonics for Space Environments IX, 96160H (1 September 2015); https://doi.org/10.1117/12.2188553
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Cited by 2 scholarly publications.
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KEYWORDS
Resistors

Sensors

Temperature metrology

Field effect transistors

Mid-IR

Superlattices

Infrared sensors

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