Defectivity evaluation of EUV reticles with etched multilayer image border by wafer printing analysis

Rik Jonckheere; Erik Verduijn; Genta Watanabe; Norihito Fukugami; Yo Sakata; Yutaka Kodera; Emily Gallagher

doi:10.1117/12.2197682

9 July 2015 Defectivity evaluation of EUV reticles with etched multilayer image border by wafer printing analysis

Rik Jonckheere, Erik Verduijn, Genta Watanabe, Norihito Fukugami, Yo Sakata, Yutaka Kodera, Emily Gallagher

Proceedings Volume 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII; 96580H (2015) https://doi.org/10.1117/12.2197682
Event: Photomask Japan 2015, 2015, Yokohama, Japan

Abstract

This paper discusses defectivity of a black border around the mask pattern of a reticle for extreme EUV lithography. An opaque image border is intended to overcome the limitation of the reticle masking blades of the scanner, in providing sufficiently sharp and accurate image delineation on wafer. The most commonly applied “black border” method for EUV reticles has the multilayer mirror removed in the image border area. A dedicated mask with such etched ML image border has been generated. It includes several modules of patterns, each surrounded by black border, so that each can be imaged separately with minimized background dose caused by its border. The printability of programmed defects within this image border has been assessed on an NXE3100 EUV scanner. Studied defect types include ML pedestals with and without absorber still on top. Especially the former must be totally avoided as such clear defect is very printable and can even erase parts of the pattern in neighboring dies.

Citation Download Citation

Rik Jonckheere, Erik Verduijn, Genta Watanabe, Norihito Fukugami, Yo Sakata, Yutaka Kodera, and Emily Gallagher "Defectivity evaluation of EUV reticles with etched multilayer image border by wafer printing analysis", Proc. SPIE 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII, 96580H (9 July 2015); https://doi.org/10.1117/12.2197682

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available