Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition

John Rönn; Lasse Karvonen; Alexander Pyymäki-Perros; Nasser Peyghambarian; Harri Lipsanen; Antti Säynätjoki; Zhipei Sun

doi:10.1117/12.2212990

1 March 2016 Enhancement of the photoluminescence in Er-doped Al₂O₃ fabricated by atomic layer deposition

John Rönn, Lasse Karvonen, Alexander Pyymäki-Perros, Nasser Peyghambarian, Harri Lipsanen, Antti Säynätjoki, Zhipei Sun

Proceedings Volume 9750, Integrated Optics: Devices, Materials, and Technologies XX; 97500P (2016) https://doi.org/10.1117/12.2212990
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

We show the enhancement of the photoluminescence at λ = 1:5 μm in highly-doped (> 10²¹ cm^-3) Er-Al₂O₃ samples by controlling the vertical distance between the Er-ions using atomic layer deposition (ALD) technique. Er₂O₃ and Al₂O₃ were deposited on top of silicon in an alternating fashion with ALD. Five Er₂O₃-Al₂O₃ samples were fabricated by keeping the amount of Er₂O₃ constant but changing the thickness of the Al₂O₃-layers between the Er₂O₃-layers. The PL spectra of the samples reveal that the PL signal enhances up to 90% when the vertical distance (the number of Al₂O₃-layers) between the Er-ions increases. The PL enhancement can be related to the reduction of up-conversion signal at 532 and 650 nm in the Er-ions. Our results demonstrate that ALD is an excellent technique to fabricate and to optimize Er-doped materials due to its unique depositions properties.

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John Rönn, Lasse Karvonen, Alexander Pyymäki-Perros, Nasser Peyghambarian, Harri Lipsanen, Antti Säynätjoki, and Zhipei Sun "Enhancement of the photoluminescence in Er-doped Al₂O₃ fabricated by atomic layer deposition", Proc. SPIE 9750, Integrated Optics: Devices, Materials, and Technologies XX, 97500P (1 March 2016); https://doi.org/10.1117/12.2212990

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