Fundamental study on dissolution behavior of poly(methyl methacrylate) by quartz crystal microbalance

Akihiro Konda; Hiroki Yamamoto; Shusuke Yoshitake; Takahiro Kozawa

doi:10.1117/12.2218965

18 March 2016 Fundamental study on dissolution behavior of poly(methyl methacrylate) by quartz crystal microbalance

Akihiro Konda, Hiroki Yamamoto, Shusuke Yoshitake, Takahiro Kozawa

Proceedings Volume 9776, Extreme Ultraviolet (EUV) Lithography VII; 977629 (2016) https://doi.org/10.1117/12.2218965
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

Ionizing radiations such as extreme ultraviolet (EUV) and electron beam (EB) are the most promising exposure source for next-generation lithographic technology. In the realization of high resolution lithography, it is necessary for resist materials to improve the trade-off relationship among sensitivity, resolution, and line width roughness (LWR). In order to overcome them, it is essential to understand basic chemistry of resist matrices in resist processes. In particular, the dissolution process of resist materials is a key process. Therefore, it is essential for next-generation resist design for ionizing radiation to clarify the dissolution behavior of the resist film into developer. However, the details in dissolution process of EUV and EB resist films have not been investigated thus far. In this study, main chain scission and dissolution behavior of poly(methyl methacrylate) (PMMA) as main chain scission type resist was investigated using quartz crystal microbalance (QCM) method and gel permeation chromatography (GPC) in order to understand the relationship between the degree of PMMA degradation and dissolution behavior. The relationship between the molecular weight after irradiation and the swelling behavior was clarified.

Citation Download Citation

Akihiro Konda, Hiroki Yamamoto, Shusuke Yoshitake, and Takahiro Kozawa "Fundamental study on dissolution behavior of poly(methyl methacrylate) by quartz crystal microbalance", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 977629 (18 March 2016); https://doi.org/10.1117/12.2218965

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