Combined continuous and time-resolved CL to study semiconductor structure and defects (Conference Presentation)

Samuel Sonderegger; David Gachet; Jean Berney

doi:10.1117/12.2237613

11 November 2016 Combined continuous and time-resolved CL to study semiconductor structure and defects (Conference Presentation)

Samuel Sonderegger, David Gachet, Jean Berney

Author Affiliations +

Proceedings Volume 9926, UV and Higher Energy Photonics: From Materials to Applications; 99260M (2016) https://doi.org/10.1117/12.2237613
Event: SPIE Nanoscience + Engineering, 2016, San Diego, California, United States

Abstract

Spectroscopic information may be acquired using an electron beam in a modern scanning electron microscope (SEM), exploiting the cathodoluminescence (CL) signal. CL offers several advantages over the usual optical spectroscopy. The multimode imaging capabilities of the SEM enable the correlation of optical properties (via CL) with surface morphology (secondary electron mode) at the nanometer scale and the large energy of the electrons allows the excitation of wide-bandgap materials. Here, we present results obtained on a field emission time-resolved and continuous (CW) cathodoluminescence scanning electron microscope. The microscope can either be operated in CW mode by heating up the emitter (Schottky emission), or in time-resolved mode by illuminating the field emission gun with a femtosecond UV laser, so that ultrafast electron pulses are emitted through the photoelectric effect. In both modes, a spacial resolution around 10 nm is demonstrated. The collected cathodoluminescence signal is dispersed in a spectrometer and analyzed with a CCD camera (CW mode) or an ultrafast STREAK camera to obtain <10 ps time resolution (TR mode). Quantitative CW cathodoluminescence was first used to quickly map defects in III-V semiconductor structures. Then, time-resolved cathodoluminescence measurements were carried out on specific regions in order to measure local lifetimes and carrier diffusion within the structures. We will also discuss the advantages of combining CL with a scanning transmission electron microscope (STEM) and introduce Attolight’s most recent developments in this field.

Conference Presentation

Citation Download Citation

Samuel Sonderegger, David Gachet, and Jean Berney "Combined continuous and time-resolved CL to study semiconductor structure and defects (Conference Presentation)", Proc. SPIE 9926, UV and Higher Energy Photonics: From Materials to Applications, 99260M (11 November 2016); https://doi.org/10.1117/12.2237613

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
PRESENTATION

WATCH
PRESENTATION SAVE TO MY LIBRARY

GET CITATION

KEYWORDS

Scanning electron microscopy

Electron microscopes

Imaging spectroscopy

Semiconductors

Spectroscopy

Ultrafast phenomena

Ultraviolet radiation

Show All Keywords

Keywords/Phrases

Search In:

Publication Years