High Frequency Performance Of Planar InGaAs/InP Avalanche Photodiodes

J. N. Hollenhorst; D. T. Ekholm; J. M. Geary; V. D. Mattera Jr.; R. Pawelek

doi:10.1117/12.960144

17 January 1989 High Frequency Performance Of Planar InGaAs/InP Avalanche Photodiodes

J. N. Hollenhorst, D. T. Ekholm, J. M. Geary, V. D. Mattera Jr., R. Pawelek

Proceedings Volume 0995, High Frequency Analog Communications; (1989) https://doi.org/10.1117/12.960144
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States

Abstract

We have developed planar InGaAs/InP avalanche photodiodes based on trichloride YPE material. Gain-bandwidth-products greater than 70 GHz and bandwidths above 5 GHz at a gain of 10 make these devices attractive for high frequency digital and analog communication. This paper discusses the effects that limit the bandwidth of heterostructure APDs and the design, fabrication, measurement and performance of our devices.

Citation Download Citation

J. N. Hollenhorst, D. T. Ekholm, J. M. Geary, V. D. Mattera Jr., and R. Pawelek "High Frequency Performance Of Planar InGaAs/InP Avalanche Photodiodes", Proc. SPIE 0995, High Frequency Analog Communications, (17 January 1989); https://doi.org/10.1117/12.960144

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